[8p-A301-1~12] 15.4 III-V-group nitride crystals

△ [8p-A301-7] Mechanism of Stress Control for GaN Growth on Si using AlN Interlayers

〇Takuya Nakahara¹, Michihiro Suzuki¹, Momoko Deura¹, Takeshi Momose¹, Masakazu Sugiyama¹, Yoshiaki Nakano¹, Yukihiro Shimogaki¹ (1.Univ. of Tokyo)

Keywords:GaN on Si, AlN interlayer, mechanism of stress control

AlN interlayer has been focused to compensate the tensile strain of GaN grown on Si wafer generating during cooling down. We investigated the dependence of growth temperature of AlN interlayer on the surface flatness, lattice relaxation, contamination, and compressive stress of GaN layer. As the AlN growth temperature increased, the surface flatness improved while the relaxation ratio decreased and Ga contamination increased. Larger compressive stress of GaN layer was applied in the case of AlN interlayer grown at higher temperature. Therefore, surface flatness of AlN interlayer has a great influence on compressive stress of GaN layer.