[8p-A411-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[8p-A411-2] Evaluation of Bulk Lifetime and Surface Recombination Velocity on Si Wafer Using QSSPC Measurements

〇akira nakayama¹, Hiromichi Yoshikawa¹, Shota Toyokura¹, Koji Amazutsumi¹ (1.Kyocera)

Keywords:bulk lifetime, surface recombination velocity, evaluation

Evaluation of bulk lifetime τb and surface recombination velocity S of minority carriers on Si bare wafers is an important task, but the evaluation method has not been sufficiently established. To obtain τb and S on Si bare wafers considering the trapping effect, we examined an evaluating method by QSSPC measurements using comparatively wide short- and long-wavelength irradiation.