[8p-PA1-1~27] 6.3 Oxide electronics

[8p-PA1-16] Structural and Electrical Properties of Sc³⁺ or Fe³⁺-Doped TiO_2-d Thin Films Prepared by Sputtering

Takuya Kawaguchi¹, Masaki Sekine¹, Makoto Minohara², Koji Horiba², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo. Univ. Sci., 2.PF, KEK)

Keywords:Oxide semiconductor

We have prepared the Sc or Fe-doped TiO2 thin film on Al2O3 substrate by RF magnetron sputtering. From the experimental results of conductivity and electronic strcuture, these thin flms exibited p-type oxide semiconductor at intermediated temperature region.