Shuichi Noda

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Speaker, Author, Co-Author

Fri. Mar 17, 2017 9:00 AM - 11:30 AM 313 (313)

Oral presentation
| 8 Plasma Electronics
| 8.4 Plasma etching

[17a-313-1~10] 8.4 Plasma etching

11:00 AM - 11:15 AM

[17a-313-9] Fabrication of Ge Fin Structure by Neutral Beam Etching

〇Shuichi Noda¹, Wataru Mizubayashi², Akiou Kikuchi¹, Kazuhiko Endo², Seiji Samukawa^1,2 (1.Tohoku Univ., 2.AIST)

Fri. Mar 17, 2017 9:00 AM - 12:45 PM E206 (E206)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[17a-E206-1~14] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

9:30 AM - 9:45 AM

[17a-E206-3] Ge Peaking Fin Structure Fabricated by Anisotropic and Low Temperature Neutral Beam Oxidation

〇Shuichi Noda¹, Yao-Jen Lee², Ti-Ji Hong³, Fu-Kuo Hsueh^2,3, Yiming Li³, Seiji Samukawa^1,3 (1.Tohoku Univ., 2.NDL, Taiwan, 3.NCTU, Taiwan)