Akinobu Takeshita

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 1:30 PM - 7:00 PM F204 (F204)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM

[15p-F204-4] Hall-Voltage Inversion in Heavily Al-doped 4H-SiC by Hall-Effect Measurement

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

2:45 PM - 3:00 PM

[15p-F204-5] Characterization of Conduction Mechanisms in Heavily Al-Doped 4H-SiC
and Possibility to Reduce Its Resistance

3:00 PM - 3:15 PM

[15p-F204-6] Electrical Characterization of Al-N Co-Doped 4H-SiC Grown by Different Methods

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Takeshi Mitani², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

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