Kazuhiro Watanabe

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 9:30 AM - 11:45 AM 318 (318)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[14a-318-1~9] 15.5 Group IV crystals and alloys

10:30 AM - 10:45 AM

[14a-318-5] Formation of strain-relaxed Ge_1−x−ySi_xSn_y layer by introducing Ge buffer layer on Si(001) substrate

〇(B)Kazuhiro Watanabe¹, Fukuda Masahiro¹, Sakashita Mitsuo¹, Kurosawa Masashi¹, Nakatsuka Osamu¹, Zaima Shigeaki^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ)