The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.5 Group IV crystals and alloys

[14a-318-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 14, 2017 9:30 AM - 11:45 AM 318 (318)

Kaoru Toko(Univ. of Tsukuba)

10:30 AM - 10:45 AM

[14a-318-5] Formation of strain-relaxed Ge1−x−ySixSny layer by introducing Ge buffer layer on Si(001) substrate

〇(B)Kazuhiro Watanabe1, Fukuda Masahiro1, Sakashita Mitsuo1, Kurosawa Masashi1, Nakatsuka Osamu1, Zaima Shigeaki1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ)

Keywords:semiconductor, GeSiSn, Ge buffer