SEIYA ISHIHARA

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Speaker, Author, Co-Author

Wed. Mar 15, 2017 10:15 AM - 12:15 PM F203 (F203)

Oral presentation
| 17 Nanocarbon Technology
| 17.3 Layered materials

[15a-F203-1~8] 17.3 Layered materials

11:30 AM - 11:45 AM

△ [15a-F203-6] MOCVD of MoS₂ using Novel Molybdenum Precursor i-Pr₂DADMo(CO)₃

〇SEIYA ISHIHARA^1,5, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, HIDEAKI MACHIDA³, YOSHIO OHSHITA⁴, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd., 4.Toyota Tech. Inst., 5.JSPS Research Fellow)

Thu. Mar 16, 2017 1:45 PM - 6:00 PM F203 (F203)

Oral presentation
| 17 Nanocarbon Technology
| 17.3 Layered materials

[16p-F203-1~15] 17.3 Layered materials

2:15 PM - 2:30 PM

[16p-F203-2] Investigating Crystal Orientation of Sputtering Deposited MoS₂ Thin Film by Analyzing Scaling Behavior of The Surface Roughness

〇SEIYA ISHIHARA^1,3, BUNTA OHNO¹, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, TAKUMI OHASHI², KENTAROU MATSUURA², HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.JSPS Research Fellow)

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