Shintaro Toguchi

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Speaker, Author, Co-Author

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

3:15 PM - 3:30 PM

△ [16p-E206-6] Effects of Quantity of SiH Groups on SiO₂/Si Interface Trap Buildup at Low-Dose-Rate Irradiation

〇Shintaro Toguchi^1,2, Takahiro Makino³, Takeshi Ohshima³, Daisuke Kobayashi², Kazuyuki Hirose^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA, 3.QST)