10:15 AM - 10:30 AM [17a-E206-6] Control of Schottky barrier heights in W/Si junctions by inserting W-silicide films composed of W-encapsulating Si clusters 〇Naoya Okada1,2, Noriyuki Uchida1, Toshihiko Kanayama1 (1.AIST, 2.JST-PRESTO)