Oral presentation

[15a-F203-1~8] 17.3 Layered materials

Wed. Mar 15, 2017 10:15 AM - 12:15 PM F203 (F203)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

10:15 AM - 10:30 AM

[15a-F203-1] Multilayer Germanenes Formed in CaGe₂ by Fluoride Diffusion

〇RITSUKO YAOKAWA¹, Tetsu Ohsuna¹, Hideyuki Nakano¹ (1.TOYOTA CENTRAL R&D LABS.)

10:30 AM - 10:45 AM

[15a-F203-2] Formation of germanium monolayer on SiC(0001) surface

〇(M2)Yusuke Maeda¹, Shingo Hayashi¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu Univ.)

10:45 AM - 11:00 AM

[15a-F203-3] Influence of growth conditions on the initial nucleation for h-BN thin film growth

〇Naoki Umehara¹, Takurou Adachi², Tetsuya Kouno², Hiroko Kominami², Kazuhiko Hara^1,3 (1.Shizuoka Univ. GSST, 2.Shizuoka Univ. GSIST, 3.Shizuoka Univ. RIE)

11:00 AM - 11:15 AM

△ [15a-F203-4] CVD growth of large-area, uniform multilayer h-BN and application to TMDC heterostructure

〇Yuki Uchida¹, Sho Nakandakari¹, Kenji Kawahara², Shigeto Yamasaki¹, Masatoshi Mituhara¹, Hiroki Ago^1,2,3 (1.Kyushu Univ., 2.GIC, Kyushu Univ., 3.JST-PRESTO)

11:15 AM - 11:30 AM

[15a-F203-5] Heteroatom-doping into hexagonal boron nitride by high-energy ion irradiation

〇Shiro Entani¹, Masaki Mizuguchi², Hideo Watanabe³, Masaru Takizawa⁴, Pavel Sorokin^1,5, Hiroshi Naramoto¹, Seiji Sakai¹ (1.QST, 2.Tohoku Univ., 3.Kyushu Univ., 4.Ritsumeikan Univ., 5.MISiS)

11:30 AM - 11:45 AM

△ [15a-F203-6] MOCVD of MoS₂ using Novel Molybdenum Precursor i-Pr₂DADMo(CO)₃

〇SEIYA ISHIHARA^1,5, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, HIDEAKI MACHIDA³, YOSHIO OHSHITA⁴, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-phase Growth Ltd., 4.Toyota Tech. Inst., 5.JSPS Research Fellow)

11:45 AM - 12:00 PM

[15a-F203-7] Investigation of Mo_1-xW_xS₂ Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C₄H₉)₂S₂

〇Yusuke Hibino¹, Seiya Ishihara^1,4, Naomi Sawamoto¹, Takumi Ohashi², Kentarou Matsuura², Hideaki Machida³, Hiroshi Sudoh³, Hitoshi Wakabayashi², Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Tech, 3.Gas-Phase Growth Ltd., 4.JSPS Research Fellow)

12:00 PM - 12:15 PM

△ [15a-F203-8] Investigation on MoS_2(1-x)Te_2xFabricated by Co-Sputtering and in-situ Annealing

Oral presentation

[16a-F203-1~11] 17.3 Layered materials

Thu. Mar 16, 2017 9:00 AM - 12:15 PM F203 (F203)

Atsushi Ando(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[16a-F203-1] Construction of atomically thin semiconductor/correlated oxide heterostructures

〇Mahito Yamamoto¹, Teruo Kanki¹, Azusa N. Hattori¹, Ryo Nouchi², Keiji Ueno³, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.Saitama Univ.)

9:15 AM - 9:30 AM

[16a-F203-2] NEGF study on band-to-band tunneling in TMDC heteojunction

〇(B)Tatsuya Kuroda¹, Nobuya Mori¹ (1.Osaka Univ.)

9:30 AM - 9:45 AM

[16a-F203-3] Device Simulation of Tunneling Transistor formed by HfS₂

〇Toru Kanazawa¹, Tomohiro Amemiya¹, Seiko Netsu¹, Vikrant Upadhyaya¹, Koichi Fukuda^2,1, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.AIST)

9:45 AM - 10:00 AM

△ [16a-F203-4] Type II HfS₂/MoS₂ heterojunction TFET

〇(M2)Seiko Netsu¹, Toru Kanazawa¹, Vikrant Upadhyaya¹, Teerayut Uwanno², Tomohiro Amemiya¹, Kosuke Nagashio², Yasuyuki Miyamoto¹ (1.Tokyo Inst., 2.UTokyo)

10:00 AM - 10:15 AM

[16a-F203-5] Controlled interface between MoS₂ and molecule toward carrier control

〇Hisashi Ichimiya¹, Kohei Miura¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹, Daisuke Kiriya^1,2 (1.Osaka Pref. Univ., 2.JST PRESTO)

10:15 AM - 10:30 AM

[16a-F203-6] Barrier thickness dependence of current in sputtering MoS₂ film with tunnel contacts

〇Naoki Hayakawa¹, Iriya Muneta¹, Takumi Ohashi¹, Kentarou Matsuura¹, Junichi Shimizu¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi wakabayashi¹ (1.Tokyo Tech.)

10:45 AM - 11:15 AM

[16a-F203-7] [INVITED] New Functional Materials Fabricated from Exfoliation/Assembly of Layered Oxides

〇Minoru Osada¹, Takayoshi Sasaki¹ (1.MANA, NIMS)

11:15 AM - 11:30 AM

[16a-F203-8] Fabrication of enhancement-mode MoS₂ transistors by ozone oxidation

〇Nobuhiko Adachi¹, Yoshihiko Shimokawa¹, Kosuke Sano¹, Takahisa Tanaka¹, Tsunaki Takanashi^1,2, Ken Uchida¹ (1.Keio Univ., 2.Kyushu Univ.)

11:30 AM - 11:45 AM

△ [16a-F203-9] Crystallinity of top & bottom surface of CVD-MoS₂ interacting with substrate

〇(M2)Sora Kurabayashi¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.PRESTO-JST)

11:45 AM - 12:00 PM

[16a-F203-10] Fabrication of thin film transistors using solution processed MoS₂ directly deposited on high-k oxide film for thin film transistor

〇(DC)Joonam Kim¹, Kennichi Haga¹, Eisuke Tokumitsu¹ (1.JAIST)

12:00 PM - 12:15 PM

△ [16a-F203-11] Resonance characteristics of MoS2 thin layer mechanical resonator

〇Daiki Yoshikawa¹, Yuga MIyamoto¹, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (1.Osaka Pref Univ.)

Oral presentation

[16p-F203-1~15] 17.3 Layered materials

Thu. Mar 16, 2017 1:45 PM - 6:00 PM F203 (F203)

Keiji Ueno(Saitama Univ.), Kenzo Maehashi(TUAT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:15 PM

[16p-F203-1] [INVITED] Solution-based Molecular Surface Treatments on Transition Metal Dichalcogenides

〇Daisuke Kiriya^1,2 (1.Osaka Pref. Univ., 2.JST PRESTO)

2:15 PM - 2:30 PM

[16p-F203-2] Investigating Crystal Orientation of Sputtering Deposited MoS₂ Thin Film by Analyzing Scaling Behavior of The Surface Roughness

〇SEIYA ISHIHARA^1,3, BUNTA OHNO¹, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, TAKUMI OHASHI², KENTAROU MATSUURA², HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech, 3.JSPS Research Fellow)

2:30 PM - 2:45 PM

[16p-F203-3] Change in Electronic Property of Atomically-Thin Hetero-Interface System with Applied Electrode Bias

〇Kenji Iida¹, Masashi Noda¹, Katsuyuki Nobusada¹ (1.IMS)

2:45 PM - 3:00 PM

[16p-F203-4] Characterization of twin boundary of CVD-grown MoS₂

〇Yusuke Kureishi¹, Mitsuhiro Okada¹, Shoji Yoshida², Kenji Watanabe³, Takashi Taniguchi³, Hidemi Shigekawa², Hisanori Shinohara¹, Ryo Kitaura¹ (1.Nagoya Univ., 2.Tsukuba Univ., 3.National Institute for Materials Science)

3:00 PM - 3:15 PM

[16p-F203-5] Size effect of catalyst nanorparticles for the growth of MoS₂ nanowires

〇(D)Mengting Weng¹, Takashi Yanase¹, Taro Nagahama¹, Toshihiro Shimada¹ (1.Hokkaido University)

3:15 PM - 3:30 PM

[16p-F203-6] Stabilities and Electronic Structure of Vacancies in MoS₂/MoS₂ and MoS₂/MoSe₂

〇Syu Urasaki¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

3:30 PM - 3:45 PM

[16p-F203-7] Structures and electronic properties of group-IV ternary alloy monolayers

〇Toru Akiyama¹, Go Yoshimura¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

4:00 PM - 4:15 PM

△ [16p-F203-8] MBE growth of GaSe thin films on Ge(111) substrates

〇Takahiro Yonezawa¹, Tatsuya Murakami¹, Koichi Higashimine¹, Antoine Fleurence¹, Yoshifumi Oshima¹, Yukiko Yamada-Takamura¹ (1.JAIST)

4:15 PM - 4:30 PM

[16p-F203-9] Formation of Sn monolayer on SiC surface and Graphene/SiC interface

〇Shingo Hayashi¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Takushi Iimori², Fumio Komori², Satoru Tanaka¹ (1.Kyushu Univ., 2.Univ. of Tokyo)

4:30 PM - 4:45 PM

△ [16p-F203-10] Pinpoint pick up & bubble-free assembly of 2D materials using PDMS/PMMA with lens shape

〇Satoshi Toyoda¹, Teerayut Uwanno¹, Kosuke Nagashio^1,2 (1.Tokyo Univ., 2.PRESTO-JST)

4:45 PM - 5:00 PM

▲ [16p-F203-11] Controlling Morphology of hBN crystals during chemical Vapor deposition synthesis

〇Subash sharma¹, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya inst. of tech)

5:00 PM - 5:15 PM

[16p-F203-12] Random telegraph signal in the time-dependent dielectric breakdown test for h-BN

〇Yoshiaki Hattori¹, Takashi Taniguchi², Kenji Watanabe², Kosuke Nagashio^1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

5:15 PM - 5:30 PM

[16p-F203-13] Exciton dynamics in monolayer WS₂ encapsulated by hBN

〇Yusuke Hoshi¹, Takashi Kuroda², Mitsuhiro Okada³, Rai Moriya¹, Satoru Masubuchi¹, Kenji Watanabe², Takashi Taniguchi², Ryo Kitaura³, Tomoki Machida^1,4 (1.Univ. of Tokyo, 2.NIMS, 3.Nagoya Univ., 4.JST-CREST)

5:30 PM - 5:45 PM

[16p-F203-14] Current jump and memory effect in field effect transistor using atomic layer materials observed at high temperature operation

Tomoki Yamanaka¹, Ayaka Higuchi¹, Masahiro Matsunaga¹, Kota Kamiya¹, Guanchen He², Jonathan P. Bird^1,2, 〇Nobuyuki Aoki¹ (1.Chiba Univ., 2.SUNY Buffalo)

5:45 PM - 6:00 PM

[16p-F203-15] Development of an electric field double layer transistor/superconductor junction based on MoS₂

〇Kohei Tsumura¹, Yumika Aikawa², Tomoe Narita², Hideaki Takayanagi³, Ryosuke Ishiguro² (1.TUS, 2.JWU, 3.RIST-TUS)

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[15a-F203-1~8] 17.3 Layered materials

[15a-F203-1] Multilayer Germanenes Formed in CaGe₂ by Fluoride Diffusion

[15a-F203-2] Formation of germanium monolayer on SiC(0001) surface

[15a-F203-3] Influence of growth conditions on the initial nucleation for h-BN thin film growth

△ [15a-F203-4] CVD growth of large-area, uniform multilayer h-BN and application to TMDC heterostructure

[15a-F203-5] Heteroatom-doping into hexagonal boron nitride by high-energy ion irradiation

△ [15a-F203-6] MOCVD of MoS₂ using Novel Molybdenum Precursor i-Pr₂DADMo(CO)₃

[15a-F203-7] Investigation of Mo_1-xW_xS₂ Fabricated by Co-Sputtering and Post-Deposition Sulfurization with (t-C₄H₉)₂S₂

△ [15a-F203-8] Investigation on MoS_2(1-x)Te_2xFabricated by Co-Sputtering and in-situ Annealing

[16a-F203-1~11] 17.3 Layered materials

[16a-F203-1] Construction of atomically thin semiconductor/correlated oxide heterostructures

[16a-F203-2] NEGF study on band-to-band tunneling in TMDC heteojunction

[16a-F203-3] Device Simulation of Tunneling Transistor formed by HfS₂

△ [16a-F203-4] Type II HfS₂/MoS₂ heterojunction TFET

[16a-F203-5] Controlled interface between MoS₂ and molecule toward carrier control

[16a-F203-6] Barrier thickness dependence of current in sputtering MoS₂ film with tunnel contacts

[16a-F203-7] [INVITED] New Functional Materials Fabricated from Exfoliation/Assembly of Layered Oxides

[16a-F203-8] Fabrication of enhancement-mode MoS₂ transistors by ozone oxidation

△ [16a-F203-9] Crystallinity of top & bottom surface of CVD-MoS₂ interacting with substrate

[16a-F203-10] Fabrication of thin film transistors using solution processed MoS₂ directly deposited on high-k oxide film for thin film transistor

△ [16a-F203-11] Resonance characteristics of MoS2 thin layer mechanical resonator

[16p-F203-1~15] 17.3 Layered materials

[16p-F203-1] [INVITED] Solution-based Molecular Surface Treatments on Transition Metal Dichalcogenides

[16p-F203-2] Investigating Crystal Orientation of Sputtering Deposited MoS₂ Thin Film by Analyzing Scaling Behavior of The Surface Roughness

[16p-F203-3] Change in Electronic Property of Atomically-Thin Hetero-Interface System with Applied Electrode Bias

[16p-F203-4] Characterization of twin boundary of CVD-grown MoS₂

[16p-F203-5] Size effect of catalyst nanorparticles for the growth of MoS₂ nanowires

[16p-F203-6] Stabilities and Electronic Structure of Vacancies in MoS₂/MoS₂ and MoS₂/MoSe₂

[16p-F203-7] Structures and electronic properties of group-IV ternary alloy monolayers

△ [16p-F203-8] MBE growth of GaSe thin films on Ge(111) substrates

[16p-F203-9] Formation of Sn monolayer on SiC surface and Graphene/SiC interface

△ [16p-F203-10] Pinpoint pick up & bubble-free assembly of 2D materials using PDMS/PMMA with lens shape

▲ [16p-F203-11] Controlling Morphology of hBN crystals during chemical Vapor deposition synthesis

[16p-F203-12] Random telegraph signal in the time-dependent dielectric breakdown test for h-BN

[16p-F203-13] Exciton dynamics in monolayer WS₂ encapsulated by hBN

[16p-F203-14] Current jump and memory effect in field effect transistor using atomic layer materials observed at high temperature operation

[16p-F203-15] Development of an electric field double layer transistor/superconductor junction based on MoS₂

Authentication

Sessions

17 Nanocarbon Technology » 17.3 Layered materials

[15a-F203-1~8] 17.3 Layered materials

△ [15a-F203-4] CVD growth of large-area, uniform multilayer h-BN and application to TMDC heterostructure

△ [15a-F203-6] MOCVD of MoS2 using Novel Molybdenum Precursor i-Pr2DADMo(CO)3

△ [15a-F203-8] Investigation on MoS2(1-x)Te2x Fabricated by Co-Sputtering and in-situ Annealing

[16a-F203-1~11] 17.3 Layered materials

△ [16a-F203-4] Type II HfS2/MoS2 heterojunction TFET

△ [16a-F203-9] Crystallinity of top & bottom surface of CVD-MoS2 interacting with substrate

△ [16a-F203-11] Resonance characteristics of MoS2 thin layer mechanical resonator

[16p-F203-1~15] 17.3 Layered materials

△ [16p-F203-8] MBE growth of GaSe thin films on Ge(111) substrates

△ [16p-F203-10] Pinpoint pick up & bubble-free assembly of 2D materials using PDMS/PMMA with lens shape

▲ [16p-F203-11] Controlling Morphology of hBN crystals during chemical Vapor deposition synthesis

Authentication

△ [15a-F203-6] MOCVD of MoS₂ using Novel Molybdenum Precursor i-Pr₂DADMo(CO)₃

△ [15a-F203-8] Investigation on MoS_2(1-x)Te_2xFabricated by Co-Sputtering and in-situ Annealing

△ [16a-F203-4] Type II HfS₂/MoS₂ heterojunction TFET

△ [16a-F203-9] Crystallinity of top & bottom surface of CVD-MoS₂ interacting with substrate