The 64th JSAP Spring Meeting, 2017

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[14a-304-1~10] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Tue. Mar 14, 2017 9:15 AM - 12:00 PM 304 (304)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.), Taizoh Sadoh(Kyushu Univ.)

9:15 AM - 9:30 AM

[14a-304-1] Effect of Interface Energy on CLC (100) Crystal Growth

〇Nobuo Sasaki1, Muhammad Arif2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)

Keywords:laser crystallization, {100} orientation control, solid-liquid interface

A crystallized Si film having (100) orientation within 10 degrees in more than 99.5 % area of the crystallized one has been recently obtained by CLC. This report investigates the effect of interface energy on CLC. We crystallizes films with and without cap-SiO2 at the condition of the same temperature distribution in Si film. The obtained films show lateral grains with cap and polygonal grains without cap resulting that interface energy has an important role in CLC.