[14a-503-1~12] 15.4 III-V族窒化物結晶

▲ [14a-503-12] TEM Study of InN Films Grown with In-situ Surface Reformation by Radical Beam Irradiation

〇(D)Faizulsalihin binAbas¹、binti Zainol Abidin Nur Liyana¹、Fujita Ryoichi¹、Mouri Shinichiro¹、Araki Tsutomu¹、Nanishi Yasushi¹ (1.Ritsumeikan Univ.)

キーワード：InN, threading dislocation, TEM

InN has outstanding material properties among III-nitride semiconductors, i.e. the smallest effective mass, the largest mobility, the highest peak and saturation velocities, and the smallest direct-band energy. Therefore, InN has been considered to be a very promising material for future electronic and optoelectronic devices. For a long time, however, difficulty in obtaining high quality InN due to high threading dislocation densities has hindered the realization of InN device applications. We succeeded in decreasing the threading dislocations densities in InN by growing InN films on micro-facetted InN template wet etched by KOH. However, in this technique, InN template need to be taken out from MBE growth chamber for KOH wet etching and reinserted back for re-growing InN film. In this report, we propose in-situ surface reformation by radical beam irradiation (ISRRI). Threading dislocation densities in InN grown by ISRRI method and DERI method are evaluated by X-ray diffraction and TEM characterization.