The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[14a-F203-1~13] 15.1 Bulk crystal growth

Tue. Mar 14, 2017 9:00 AM - 12:30 PM F203 (F203)

Hiraku Ogino(AIST)

11:45 AM - 12:00 PM

[14a-F203-11] Effect of oxygen defect on melting point and Curie point of impurity-doped lithium niobate

Chihiro Koyama1, Jun Nozawa1, Junpei Okada1, Satoshi Uda1 (1.IMR, Tohoku Univ.)

Keywords:Melting temperature, Curie temperature, Point defect

Curie temperature and melting temperature of impurity-doped lithium niobate (LN) that was annealed in Ar was measured. The results suggest that redox of impurity make it possible to control Curie temperature and melting temperature. Redox states of impurity change concentrations of oxygen defect in LN.