[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-11] The mechanisms of self-diffusion in silicon crystals

〇Masashi Suezawa¹, Yosiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R., Tohoku Univ.)

Keywords:silicon, self diffusion, vacancy

Self-diffusion in Si crystals occurs with both the vacancy mechanism and interstitial mechanism. The contributions of those mechanisms to self-diffusion were not clarified since properties of vacancies and interstitials were not determined experimentally. Measurements of diffusion constant was also difficult since effects of impurities were very large. Recently, good data of diffusion constant were obtained with careful experiments. We analyzed that data with the use of our data on the properties of point defects and determined the contribution of vacancy mechanism and interstitial mechanism to the self-diffusion.