[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-3] Effect of Annealing on Generation of Slip Dislocation from Scratches in Si Wafers

〇JUN FUJISE¹, Toshiaki Ono¹ (1.SUMCO)

Keywords:silicon wafer, strength, oxygen concentration

The effect of annealing on the critical stress for the generation of slip dislocations in Si wafers has not been clear. Oxygen concentration and residual stress in the Si wafers change by annealing. In this study, we reveal the dependence of the critical stress on the oxygen concentration and the residual stress.