[14a-F201-1~11] 15.7 Crystal evaluation, impurities and crystal defects

[14a-F201-4] Numerical analysis of dislocation density in Si single crystal using oxygen diffusion

〇Satoshi Nakano², Wataru Fukushima¹, Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

Keywords:silicon, dislocation

It has been reported that dislocation is immobilized by oxygen atoms in the Si single crystal due to dislocation locking. And high oxygen concentration in CZ Si crystal using high temperature process restrain dislocation multiplication. In this study, we investigated the influence of oxygen atoms in the Si single crystal on dislocation multiplication and analyze the process of dislocation multiplication during annealing process by numerical analysis.