[14p-315-1~15] 13.8 Compound and power electron devices and process technology

[14p-315-11] TCAD Simulation of AlGaN/GaN HFET Drain Avalanche Breakdown

〇Yasuo Ohno¹, Zhong Wang², Keunsam Lee², Wonchul Choi² (1.Laser Systems, 2.Nihon Synopsys)

Keywords:AlGaN/GaN HFET, avalanche breakdown

Drain avalanche breakdown of AlGaN/GaN HFET is simulated using TCAD simulator. Standard structure FET shows S-type negative differential resistance with the peak voltage of around 500V. At high current region, however, the drain voltage decreases down to 200V. The reduction of the drain voltage is caused by the low-resistance path formed by the double injection of electrons and holes. Breakdown voltage can be increased by either the removal of holes by introducing GR centers or, dividing the paths for electrons and holes by p-type region.