Mapping of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

Hiroaki Konishi; Hiroyoshi Imadate; Yuya Yamaoka; Kou Matsumoto; Takashi Egawa; Kenji Shiojima

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Fujitsu Lab.)

2:00 PM - 2:15 PM

[14p-315-4] Mapping of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

Hiroaki Konishi¹, Hiroyoshi Imadate¹, Yuya Yamaoka^2,3, Kou Matsumoto², Takashi Egawa³, 〇Kenji Shiojima¹ (1.Univ. of Fukui, 2.Taiyo Nippon Sanso Corp., 3.Nagoya Inst. of Tech.)

Keywords:AlGaN/GaN HEMT, Schottky contact, SIPM

We have allpled SIPM to map AlGaN/GaN HEMT epitaxial structure on Si substrats. We found stripe pattern in craced regions and small-signal regions in hirocks in the SIPM images.