Kenji Shiojima

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Speaker, Author, Co-Author

Tue. Mar 14, 2017 1:15 PM - 5:15 PM 315 (315)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14p-315-1~15] 13.8 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

[14p-315-4] Mapping of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

Hiroaki Konishi¹, Hiroyoshi Imadate¹, Yuya Yamaoka^2,3, Kou Matsumoto², Takashi Egawa³, 〇Kenji Shiojima¹ (1.Univ. of Fukui, 2.Taiyo Nippon Sanso Corp., 3.Nagoya Inst. of Tech.)

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P4 (BP)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

9:30 AM - 11:30 AM

[16a-P4-6] Mapping of degradation of AlGaN/GaN MIS-HEMTs using scanning internal photoemission microscopy

Shingo Murase¹, Watamura Yo², Tetsuya Suemitsu², 〇Kenji Shiojima¹ (1.Univ. of Fukui, 2.Tohoku Univ.)

Wed. Mar 15, 2017 1:30 PM - 7:00 PM F204 (F204)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

4:00 PM - 4:15 PM

[15p-F204-9] Mapping of Ni/p-3C-SiC Shottky contacts on 6H-SiC substrate by using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Naoki Mishina¹, Naoto Ichikawa², Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

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