[14p-318-1~9] 15.5 Group IV crystals and alloys

[14p-318-1] Real-time spectro-ellipsometric analysis of the initial stage of Ge growth on SiO₂

〇Housei Akazawa¹ (1.NTT DIC)

Keywords:GE, SiO2, spectroscopic ellipsometry

Ge dots self-asssembled on SiO₂ can be applied to high-density memories and emission devices. For precise control of the dor formation, optical monitoring is a powerful technique. We studies the initial stages of Ge growth on SiO₂ by real-time spectroscopic ellipsometry. Ge nucleation and the following crystal growth were monitored by the changes in ellipsometric angles as well as reflectivity, which emabled identification of incubation time duruing growth.