[14p-P3-1~19] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[14p-P3-2] Photoelectron Holography of As doped in Si and Their Electrical Activity.

〇Kotaro Natori¹, Kazou Tsutsui¹, Tomohiro Matsushita², Takayuki Muro², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Koichi Hayashi³, Fumihiko Matsui⁴, Yoshitada Morikawa⁵, Masaru Shimomura⁶, Toyohiko Kinoshita² (1.Tokyo Tech., 2.JASRI, 3.Nagoya Inst. Tech, 4.Nara Inst. of Sci. and Tech., 5.Osaka Univ., 6.Shizuoka Univ.)

Keywords:photoelectron holography, electrical active/ deactivate of impurities, structure of As

An occupation site and the cluster structure of impurities element doped in a Si crystal should be connected with the electrical activation of impurities directly. Various kinds of arguments had been done, but the thing that I connected with the electrical activity was not easy until now while evaluating the atom site of impurities directly. We reported that we succeeded in characteristic extraction of the occupation structure of the As atom in the Si crystal by a photoelectron holography technology using synchrotron radiation for the first time before. I pushed forward an argument about occupation structure of the As and linkage with electrical active / deactivate this time.