[14p-P3-1~19] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[14p-P3-6] Carbon nano-material filling for LSI interconnects using supercritical carbon dioxide

〇Kazuya Onose¹, Tuyoshi Miura¹, Makoto Muta¹, Kei Nishikawa¹, Yoshio Uhara¹, Masatoshi Itoh¹, Shigeru Saitou¹ (1.Tokyo Univ. of Science)

Keywords:supercritical carbon dioxide, Carbon nano-material, LSI interconnects