[15a-513-1~8] 13.6 Semiconductor English Session

▲ [15a-513-5] Breakdown Voltage Instability in nLDMOS Transistors

〇Chen Jone F¹、Feng Ya-Sheng¹ (1.National Cheng Kung Univ.)

キーワード：LDMOS transistor, breakdown voltage

Hot-carrier induced drain breakdown voltage instability in n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Based on charge pumping measurement data and technology computer-aided-design simulation results, hot-carrier induced interface states generated at the accumulation region is proposed to be the root cause of the breakdown voltage instability.