10:00 AM - 10:15 AM
[15a-B6-3] Hysteresis behavior in trilayer graphene
Keywords:Trilayer graphene, Hysteresis
In this study we fabricated and characterized the trilayer graphene based field-effect transistor (FET). The transport measurements were conducted in a vacuum at the temperature of 5 ~ 300 K. In the gate characteristics with the ambipolar curve the hysteresis behavior was observed, which also appeared when the sweep direction of gate voltage is opposite. This characteristic seems to differ from that of monolayer. The further analysis and discussion in detail will be presented.