[15a-F201-1~12] 15.7 Crystal evaluation, impurities and crystal defects

△ [15a-F201-12] Evaluation of GaN wafer for power devices by Kelvin probe Force Microscopy(1)

〇Yuuki Uchida¹, Mitsuhiro Yasuno¹, Tatuki Suzuki¹, Mizuki Uchimori¹, Hidekazu Yamamoto¹ (1.CIT)

Keywords:GaN, Wide gap Semiconductor, Kelvin probe Force Microscopy

The current mainstream of power device semiconductors is silicon.
However, silicon has its limit in physical properties.
Therefore, GaN which is a wide gap semiconductor was evaluated using Atomic Force Microscope.
As a result, In GaN on GaN, the carrier density was confirmed to be lowered.