[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-F204-3] In situ observation of stacking fault expansion in 4H-SiC by X-ray topography in back reflection geometry

〇Fumihiro Fujie¹, Shunta Harada¹, Kenta Murayama¹, Kenji Hanada¹, Penglei Chen¹, Tomohisa Kato², Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

Keywords:in situ observation, X-ray topography, stacking fault

Nitrogen is highly doped in SiC substrate to decrease its resistivity. In highly nitrogen doped SiC, it is reported that stacking fault expands and contracts at high temperature. We have constructed a system which X-ray topography observation at high temperature is possible and succeeded in in situ observation of stacking fault expansion and contraction in transmission geometry. In this research, we attempted in situ observation in back reflection geometry which can identify the core structure of partial dislocation.