4:00 PM - 4:30 PM
[15p-304-6] The characteristics of Copper Stress Migration and the measure for long time memory
Keywords:Stress Migration, SIV, Stress Induced Voiding, Copper Interconnect
Higher reliability is necessary for the long time memory device development than usual commercial devices. Stress migration is the one of the crucial phenomenon for interconnect development, same as Electro migration. This failure phenomenon is a wear-out failure for LSI devices. So it is indispensable to elucidate its’ characteristics and take an effective countermeasure. The characteristic of the stress migration will be explained with long time test data and the countermeasure for that will be proposed in this symposium.