[15p-304-1~10] Highly reliable metallization technology for long term retention

[15p-304-8] Properties of amorphous cobalt alloy as a single layer diffusion barrier
for LSI interconnections

Maryamsadat Hosseini¹, Daisuke Ando¹, Yuji Sutou¹, 〇Junichi Koike¹ (1.Tohoku Univ.)

Keywords:Interconnect, Cobalt alloy, diffusion barrier

Reduction of LSI dimension requires the barrier thickness be less than 1 nm for local interconnections. Current technology uses a two-layer structure consisted of amorphous nitride for diffusion barrier property and metal liner of Co and other metals for adhesion and wetting property with Cu. In this presentation, we propose amorphous Co-Ti alloys which can make a single-layer structure having both properties of diffusion barrier and liner.