The 64th JSAP Spring Meeting, 2017

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15p-315-1~17] 13.8 Compound and power electron devices and process technology

Wed. Mar 15, 2017 1:15 PM - 5:45 PM 315 (315)

Naoteru Shigekawa(Osaka City Univ.), Hiroshi Okada(Toyohashi Univ. of Tech.)

4:00 PM - 4:15 PM

△ [15p-315-11] Reduced Gate Leakage Current in N-polar GaN MIS-HEMTs

〇Kiattiwut Prasertsuk1, Akinori Miura1, Shinji Tanaka1, Tomoyuki Tanikawa1, Takeshi Kimura1, Shigeyuki Kuboya1, Tetsuya Suemitsu2, Takashi Matsuoka1 (1.IMR Tohoku Univ., 2.RIEC Tohoku Univ.)

Keywords:nitride semiconductors, HEMT, N-polar