[15p-411-1~16] 13.9 Optical properties and light-emitting devices

[15p-411-12] Photoluminescence of ZnGa₂O₄:Eu³⁺ films affected by the substrate

〇Housei Akazawa¹, Shinojima Hiroyuki² (1.NTT DIC, 2.Kurume NCT)

Keywords:ZnGa2O4, Eu3+ ion, photoluminescence

Eu³⁺ ions doped in ZnGa₂O₄ films is promising for opto-electronic devices because of its wide process margin. Suppression of non-radiative deexcitation channel is essential to achieve high emision yield. We could enhance emiksion intensity by using SiO₂ substrate instead of Si . From various emission data, we obtained information about the host crystal to gain high emission yield.