[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-4] Hall-Voltage Inversion in Heavily Al-doped 4H-SiC by Hall-Effect Measurement

〇(M2)Akinobu Takeshita¹, Tatsuya Imamura¹, Kouta Takano¹, Kazuya Okuda¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

Keywords:Hall-Effect Measurement