[15p-P7-1~5] 15.5 Group IV crystals and alloys

[15p-P7-3] Bi-mediated formation of Ge nanodots by vacuum evaporation
and low temperature annealing -1

〇(M1)Kensuke Takita¹, Kazuto Tsushima¹, Yoshiharu Enta¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Takayuki Ikeda³, Seiichiro Mizuno³, Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs., 3.NTT-AT)

Keywords:germanium, nanodots, bismuth

We have tried to form Bi-mediated crystalline Ge nanodots by vacuum evaporation and low-temperature annealing on a Si substrates with a thermal oxide film. We have successfully observed the formation of crystalline Ge nanodots which contain little or no bismuth. AES spectra also show that Bi signal was disappeared by the 400 ℃ annealing. We have concluded that the crystalline Ge nanodots were formed during the annealing process by which bismuth was eliminated and sublimated from the initial amorphous nanodots consist of bismuth and germanium.