Oral presentation

[14a-318-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 14, 2017 9:30 AM - 11:45 AM 318 (318)

Kaoru Toko(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[14a-318-1] Influence on morphology and strain of covering Ge quantum dots or Si cap layer with carbon

〇Makoto Arita¹, Yuhki Itoh^2,3, Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ., 3.JSPS Research Fellow DC)

9:45 AM - 10:00 AM

[14a-318-2] Carbon-mediated Ge quantum dot formation on Si spacer via solid-phase epitaxy

〇Kaito Takeshima¹, Itoh Yuhki^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ., 2.JSPS Research Fellow DC)

10:00 AM - 10:15 AM

[14a-318-3] Self-assembled growth of Ge quantum dots on strain-compensated Si_1-xC_xspacer via carbon mediation

〇(D)Yuhki Itoh^1,2, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Grad. Sch. Eng., Tohoku Univ., 2.JSPS Research Fellow DC)

10:15 AM - 10:30 AM

[14a-318-4] Surface morphology and Chemical Bonding Features of Epitaxial Ag(111) grown on Ge

〇Koichi Ito¹, Akio Ohta^1,2, Masashi Kurosawa^1,2, Masaaki Araidai^1,2,3, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.Inst. Adv. Res., Nagoya Univ., 3.IMaSS, Nagoya Univ.)

10:30 AM - 10:45 AM

[14a-318-5] Formation of strain-relaxed Ge_1−x−ySi_xSn_y layer by introducing Ge buffer layer on Si(001) substrate

〇(B)Kazuhiro Watanabe¹, Fukuda Masahiro¹, Sakashita Mitsuo¹, Kurosawa Masashi¹, Nakatsuka Osamu¹, Zaima Shigeaki^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ)

10:45 AM - 11:00 AM

[14a-318-6] Effects of low-temperature buffer layer on GeSn epitaxial growth

〇Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol., 2.NICT)

11:00 AM - 11:15 AM

△ [14a-318-7] Evaluation of Anisotropic Biaxial Strain Depending on Patterned Size in Ge_1-xSn_x Mesa Structures by Oil-Immersion Raman Spectroscopy

〇(M1)Tatsumi Murakami¹, Kazuma Takeuchi¹, Ryo Yokogawa¹, Kohei Suda¹, Seiya Ishihara^1,2, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow)

11:15 AM - 11:30 AM

[14a-318-8] Crystal growth of Ga-doped Si_1-xSn_x films and its electrical properties

〇Yu Inaishi¹, Masashi Kurosawa^1,2,3, Osamu Nakatsuka¹, Shigeaki Zaima^1,4 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IAR, Nagoya Univ., 3.PRESTO-JST, 4.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

[14a-318-9] [JSAP Young Scientist Award Speech] Heavy doping for poly-Ge_1-xSn_x using pulsed laser annealing in water

〇Kouta Takahashi^1,2, Masashi Kurosawa^1,3, Hiroshi Ikenoue⁴, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,5 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.PRESTO, JST, 4.Dept. of Gigaphoton Next GLP, Grad. Sch. of ISEE, Kyushu Univ., 5.IMaSS, Nagoya Univ.)

Oral presentation

[14p-318-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 14, 2017 1:45 PM - 4:00 PM 318 (318)

Masashi Kurosawa(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[14p-318-1] Real-time spectro-ellipsometric analysis of the initial stage of Ge growth on SiO₂

〇Housei Akazawa¹ (1.NTT DIC)

2:00 PM - 2:15 PM

[14p-318-2] Effects of annealing on crystallinity of Ge(111) thin films on c-plane sapphire substrate

〇Fumiyasu Ohtake¹, Yamato Kawaguchi², Yuhki Itoh^2,3, Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad.Sch.Eng.Tohoku Univ., 3.JSPS Research Fellow DC)

2:15 PM - 2:30 PM

△ [14p-318-3] Epitaxial growth of single crystalline silicon-germanium thin film on silicon substrates by solid phase crystallization (Ⅱ)

〇(M2)Alaa Hassan Hamdoh¹, Tetsuya Kaneko¹, Masao Isomura¹ (1.Tokai Univ.)

2:30 PM - 2:45 PM

[14p-318-4] Au film thickness dependence on low temperature Au induced lateral crystallization for amorphous Ge on insulating substrate

〇(BC)Takuya Sakai¹, Kusano Kinta¹, Takakura Kenichiro¹, Tsunoda Isao¹ (1.NIT;Kumamoto College)

2:45 PM - 3:00 PM

△ [14p-318-5] Optical properties of tensile-strained highly-doped n-type Ge wires fabricated by lateral liquid-phase epitaxial growth

〇Takashi Tomita¹, Hiroshi Oka¹, Masahiro Koyama¹, Shogo Tanaka¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Graduate School of Engineering, Osaka University)

3:00 PM - 3:15 PM

△ [14p-318-6] Low-temperature layer exchange synthesis and characterization of multilayer graphene on insulator

〇Hiromasa Murata¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

3:15 PM - 3:30 PM

[14p-318-7] Fast Growth of Sn Doped Ge on Insulator by Aluminum Induced Crystallization at Low Temperature

〇Masaya Sasaki¹, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Kyushu Univ.)

3:30 PM - 3:45 PM

[14p-318-8] Au-Induced Low-Temperature Lateral Crystallization of a-Ge_1-xSn_x (x>0.1) on Insulator

〇Takatsugu Sakai¹, Ryo Matsumura¹, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Kyusyu Univ.)

3:45 PM - 4:00 PM

[14p-318-9] Low-Temperature Solid Phase Crystallization of Laser Irradiated Amorphous GeSn on Insulator

〇Kenta Moto¹, Takayuki Sugino¹, Ryo Matsumura¹, Taizoh Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.Kyushu Univ.)

Poster presentation

[15p-P7-1~5] 15.5 Group IV crystals and alloys

Wed. Mar 15, 2017 1:30 PM - 3:30 PM P7 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[15p-P7-1] Fabrication of lattice-matched GeSiSn/Ge electron-tunneling double-barrier resonant
tunneling diodes

〇Kazuaki Haneda¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol., 2.NICT)

1:30 PM - 3:30 PM

[15p-P7-2] Depth characterization of chemical states in GeSn thin film by HAXPES (II)

〇Koji Usuda¹, Riichiro Takaishi¹, Masahiko Yoshiki¹, Kohei Suda², Atsushi Ogura², Mitsuhiro Tomita¹ (1.Toshiba Corp., 2.Meiji Univ.)

1:30 PM - 3:30 PM

[15p-P7-3] Bi-mediated formation of Ge nanodots by vacuum evaporation
and low temperature annealing -1

〇(M1)Kensuke Takita¹, Kazuto Tsushima¹, Yoshiharu Enta¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Takayuki Ikeda³, Seiichiro Mizuno³, Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs., 3.NTT-AT)

1:30 PM - 3:30 PM

[15p-P7-4] Bi-mediated formation of Ge nanodots by vacuum evaporation
and low temperature annealing -2

〇(B)Kazuto Tsushima¹, Kensuke Takita¹, Hideki Nakazawa¹, Yoshiharu Enta¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs.)

1:30 PM - 3:30 PM

[15p-P7-5] Evaluation of low-temperature deposition process of SiGeHEMT by Sputter Epitaxy Method

〇Katsumi Okubo¹, Motohashi Akira¹, Degura Kyouhei¹, Hirose Nobumitsu², Kasamatsu Akifumi², Matsui Toshiaki², Tsukamoto Takahiro¹, Suda Yoshiyuki¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Information and Communications Technol)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[14a-318-1~9] 15.5 Group IV crystals and alloys

[14a-318-1] Influence on morphology and strain of covering Ge quantum dots or Si cap layer with carbon

[14a-318-2] Carbon-mediated Ge quantum dot formation on Si spacer via solid-phase epitaxy

[14a-318-3] Self-assembled growth of Ge quantum dots on strain-compensated Si_1-xC_xspacer via carbon mediation

[14a-318-4] Surface morphology and Chemical Bonding Features of Epitaxial Ag(111) grown on Ge

[14a-318-5] Formation of strain-relaxed Ge_1−x−ySi_xSn_y layer by introducing Ge buffer layer on Si(001) substrate

[14a-318-6] Effects of low-temperature buffer layer on GeSn epitaxial growth

△ [14a-318-7] Evaluation of Anisotropic Biaxial Strain Depending on Patterned Size in Ge_1-xSn_x Mesa Structures by Oil-Immersion Raman Spectroscopy

[14a-318-8] Crystal growth of Ga-doped Si_1-xSn_x films and its electrical properties

[14a-318-9] [JSAP Young Scientist Award Speech] Heavy doping for poly-Ge_1-xSn_x using pulsed laser annealing in water

[14p-318-1~9] 15.5 Group IV crystals and alloys

[14p-318-1] Real-time spectro-ellipsometric analysis of the initial stage of Ge growth on SiO₂

[14p-318-2] Effects of annealing on crystallinity of Ge(111) thin films on c-plane sapphire substrate

△ [14p-318-3] Epitaxial growth of single crystalline silicon-germanium thin film on silicon substrates by solid phase crystallization (Ⅱ)

[14p-318-4] Au film thickness dependence on low temperature Au induced lateral crystallization for amorphous Ge on insulating substrate

△ [14p-318-5] Optical properties of tensile-strained highly-doped n-type Ge wires fabricated by lateral liquid-phase epitaxial growth

△ [14p-318-6] Low-temperature layer exchange synthesis and characterization of multilayer graphene on insulator

[14p-318-7] Fast Growth of Sn Doped Ge on Insulator by Aluminum Induced Crystallization at Low Temperature

[14p-318-8] Au-Induced Low-Temperature Lateral Crystallization of a-Ge_1-xSn_x (x>0.1) on Insulator

[14p-318-9] Low-Temperature Solid Phase Crystallization of Laser Irradiated Amorphous GeSn on Insulator

[15p-P7-1~5] 15.5 Group IV crystals and alloys

[15p-P7-1] Fabrication of lattice-matched GeSiSn/Ge electron-tunneling double-barrier resonant
tunneling diodes

[15p-P7-2] Depth characterization of chemical states in GeSn thin film by HAXPES (II)

[15p-P7-3] Bi-mediated formation of Ge nanodots by vacuum evaporation
and low temperature annealing -1

[15p-P7-4] Bi-mediated formation of Ge nanodots by vacuum evaporation
and low temperature annealing -2

[15p-P7-5] Evaluation of low-temperature deposition process of SiGeHEMT by Sputter Epitaxy Method

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[14a-318-1~9] 15.5 Group IV crystals and alloys

△ [14a-318-7] Evaluation of Anisotropic Biaxial Strain Depending on Patterned Size in Ge1-xSnx Mesa Structures by Oil-Immersion Raman Spectroscopy

[14p-318-1~9] 15.5 Group IV crystals and alloys

△ [14p-318-3] Epitaxial growth of single crystalline silicon-germanium thin film on silicon substrates by solid phase crystallization (Ⅱ)

△ [14p-318-5] Optical properties of tensile-strained highly-doped n-type Ge wires fabricated by lateral liquid-phase epitaxial growth

△ [14p-318-6] Low-temperature layer exchange synthesis and characterization of multilayer graphene on insulator

[15p-P7-1~5] 15.5 Group IV crystals and alloys

Authentication

△ [14a-318-7] Evaluation of Anisotropic Biaxial Strain Depending on Patterned Size in Ge_1-xSn_x Mesa Structures by Oil-Immersion Raman Spectroscopy