[15p-P7-1~5] 15.5 Group IV crystals and alloys

[15p-P7-4] Bi-mediated formation of Ge nanodots by vacuum evaporation
and low temperature annealing -2

〇(B)Kazuto Tsushima¹, Kensuke Takita¹, Hideki Nakazawa¹, Yoshiharu Enta¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh², Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.NTT Basic Res. Labs.)

Keywords:nanodots, germanium, bismuth

In our previous report, we have reported that we have successfully formed Bi-meditated crystalline Ge nanodots by vacuum evaporation and two-step low-temperature annealing. However, the annealing effect for each step has not revealed yet. In this report, we have studied the effect by in-situ AFM observation during the 300°C annealing process and AES analysis for both of the samples before and after the process. We have revealed the annealing effect appears at around 300°C for above mentioned nanodot formation.