[15p-P8-1~10] 15.7 Crystal evaluation, impurities and crystal defects

[15p-P8-4] Effect of background charge and plane stress on dopant stability in Ge thin film / Si substrate structure

〇JUN INAGAKI¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

Keywords:Density functional theory, Germanium on Silicon, Dopant

Ge (001) thin film grown on Si substrate with p(2×2) surface dimer structure was investigated focusing on the stability of dopant atoms by using first principles calculation. Ga atoms in Ge thin film were showing higher formation energy than that of in bulk and Si surface model, But the opposite results were obtained for C atoms. It was considered the effects of background charge and plane stress on dopant stability as the reasons.