[16a-P4-1~29] 13.8 Compound and power electron devices and process technology

[16a-P4-18] Temperature dependence of vertical leakage current in AlGaN/GaN high-electron-mobility transistor on Si substrates

〇Hayato Kimura¹, Yuya Yamaoka^1,2, Ken Kakamu¹, Takashi Egawa¹ (1.Nagoya Inst.Tech, 2.Taiyo Nippon Sanso Corp.)

Keywords:AlGaN/GaN HEMT, vertical leakage current, temperature dependence