[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1] Effects of Temperature Differences in Seeding on Crystal Quality in Solution Growth of SiC

〇Naomichi Tsuchimoto¹, Hodaka Kutsukake¹, Koki Suzuki¹, Masaru Takahashi¹, Koangyoung Hyun¹, Toshinori Taishi¹ (1.Shinshu Univ.)

Keywords:SiC, crystal growth