[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-2] Detection of damaged layers induced during CMP process and linkage analyses of the structure of the damaged layer by MPJ, SEM, AFM, and FIB-STEM

〇Toshiyuki Isshiki¹, Takahiro Sato², Masaki Hasegawa², Atsushi Miyaki², Masato Iyoki², Takehiro Yamaoka², Katsunori Onuki², Kobayashi Kenji² (1.Kyoto Inst. Tech., 2.Hitachi Hightech.)

Keywords:mirror projection electron Microscopy, latent scratch, SiC

Latent scratches in 4H-SIC epi-ready wafer induced during CMP process were inspected by mirror projection electron microscopy (MPJ). The linear contrasts of latent scratches were clearly detected in MPJ image. Their crystallographic structures were analyzed by linkage of SEM, AFM, FIB-STEM. Two lines of dislocation contrasts were observed in STEM image along the latent scratches, and strain areas remained in the shallow area of depths less than 20 nm.