[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-11] Difference between dry-oxide and nitrided SiC-MOS interfaces studied by electrically-detected-magnetic-resonance (EDMR) spectroscopy

〇Takahide Umeda¹, Geonwoo Kim¹, Hironori Yoshioka², Ryouji Kosugi², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

Keywords:MOSFET, interface state, ESR

We studied Si-face 4H-SiC MOSFETs by means of electrically-detected-magnetic-resonance spectroscopy. In both dry-oxide and NO-nitrided MOSFETs, we detected interfacial defects originating from carbon and silicon atoms. The main defect is a carbon-related defect which is similar to carbon dangling bonds in amorphous carbons and many other carbon-related materials. After the nitridation, the defects observed were significantly reduced. Therfeore, nitrogen incorporation is very effective for eliminating the defect levels or defects themselves. We will discuss other features of the observed EDMR centers and the two interfaces.