[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-13] Electron-spin-resonance observations on dry-oxide, nitrided, and POCl₃-annealed 4H-SiC/SiO₂ interfaces

〇(M2)Geonwoo Kim¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Mitsuo Okamoto³, Shinsuke Harada³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

Keywords:MOS system, interface defects, ESR

We studied Si-face 4H-SiC/SiO₂ interfaces by using electron-spin-resonance spectroscopy. We prepared 4H-SiC epitaxial layer and performed dry oxdiation, NO POA and POCl₃ POA. We detected 4H-SiC/SiO₂ interfacial defects originating from carbon atoms. Those carbon-related defects in 4H-SiC/SiO₂ are close to carbon dangling bonds in amorphous carbons and carbon-related materials. In addition, it is known that the carbon-related defects are dramatically reduced after NO POA and POCl₃ POA.