[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-14] Modeling of Busbar Skin Effects in Turn-Off Conditions

〇Koichi Fukuda¹, Junichi Hattori¹, Yoshihiro Sato¹, Hiroshi Sato¹, Hiroshi Yamaguchi¹ (1.AIST)

Keywords:SiC, Skin Effect, Compact modeling

SiC power module suffer from large skin effects caused by 100A current change in 10 nsec. Transient skin effects of SiC power module busbar is studied.