[16p-412-1~20] 13.5 デバイス／集積化技術

▲ [16p-412-8] Annealing effects on electrical characteristics of Ge-source/Si-channel hetero-junction tunneling FETs

〇(D)Bae TaeEon^1,2、Wakabayashi Yuki¹、Nakane Ryosho¹、Takenaka Mitsuru^1,2、Takagi Shinichi^1,2 (1.The Univ. of Tokyo、2.JST-CREST)

キーワード：Tunnel FET, Post metal annealing, Subthreshold swing

A tunneling field-effect transistor (TFET) is one of the most promising concepts for ultra-low power devices, which relies on the band-to-band tunneling mechanism. A Ge/Si hetero-structure with staggered type-II band alignment can effectively reduce tunneling width in the source junction. In TFET with this structure, high on/off current ratio and steep SS can be achieved. Furthermore, it has been found that reduction in D_it between Al₂O₃ and the Si channel region is a critical factor for high performance Ge/Si hetero-junction TFETs in the previous experiments. In this study, we examine effects of post metal annealing (PMA) in two different gas ambient (N₂ and forming gas (4% H₂/N₂)) on the electrical characteristics of the Ge/Si hetero-junction TFETs. The electrical characteristics of Ge/Si hetero-junction TFETs with different gas ambient were studied. The higher TFET performance of large on current and steep subthreshold swing was realized by forming gas (4% H₂/N₂) PMA.