[16p-502-1~10] Process technology for advanced power semiconductor devices

[16p-502-8] Ga₂O₃ Wafer Process Technology for Power Devices

〇Akito Kuramata^1,2, Kimiyoshi Koshi^1,2, Kohei Sasaki^1,2, Ken Goto^1,2, Shinya Watanabe^1,2, Yu Yamaoka^1,2, Daiki Wakimoto^1,2, Quang Tu Thieu¹, Takekazu Masui^1,2, Shigenobu Yamakoshi^1,2, Hisashi Murakami³, Yoshinao Kumagai³, Masataka Higashiwaki⁴ (1.Novel Crystal Tech., 2.Tamura Corp., 3.Tokyo Univ. of Agri. & Tech., 4.NICT)

Keywords:Ga2O3, power devices, wide-bandgap semiconductor

Ga2O3 is an oxide semiconductor which has a large bandgap over 4.5 eV. The conductivity can be controlled in the range between 10^-3 and 10¹² Ωcm. The other attractive point of this material in terms of industrial application is that low-cost production is possible because large-size bulk single crystals are grown from melt source. In this presentation, we will survey Ga₂O₃ wafer process technology mainly about wafer production, crystal growth, and doping control. The feasibility of applying this material to power devices will be discussed.