The 64th JSAP Spring Meeting, 2017

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-E206-1~17] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Thu. Mar 16, 2017 1:45 PM - 6:30 PM E206 (E206)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

3:15 PM - 3:30 PM

△ [16p-E206-6] Effects of Quantity of SiH Groups on SiO2/Si Interface Trap Buildup at Low-Dose-Rate Irradiation

〇Shintaro Toguchi1,2, Takahiro Makino3, Takeshi Ohshima3, Daisuke Kobayashi2, Kazuyuki Hirose1,2 (1.Univ. Tokyo, 2.ISAS/JAXA, 3.QST)

Keywords:ELDRS, total ionizing dose, interface trap density