The 64th JSAP Spring Meeting, 2017

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[17a-301-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 17, 2017 9:00 AM - 12:15 PM 301 (301)

Mitsuru Sometani(AIST)

11:00 AM - 11:15 AM

[17a-301-8] Oxidant concentration at SiO2/SiC(000-1) Interface during wet oxidation.

〇Naoya Serizawa1, Ryu Hasunuma1, Kikuo Yamabe1 (1.Tsukuba Univ.)

Keywords:wet oxidation, Deal-Grove