[17a-315-1~15] 8.3 Plasma deposition of thin film and surface treatment

△ [17a-315-2] Preparation of high index surfaces cubic boron nitride and diamond thin film growth

〇(DC)Takahiro Tamura¹, Takuya Takami¹, Takashi Yanase², Taro Nagahama², Toshihiro Shimada² (1.Hokkaido Univ., 2.Hokkaido Univ.)

Keywords:cubic boron nitride, diamond, microwave plasma

We have established techniques to handle small crystals of cubic boron nitride (200 mm) and prepare surfaces with arbitrary crystal indexes. We found that B₂O₃ is a very useful adhesive with low vapor pressure to fix the crystal for handling. We used x-ray diffractometer to align the crystal orientation and prepare surfaces by an ion beam cross section polisher. N₂ plasma makes triangular etch pits on (1(-)1(-)1(-))N surface but not (111)B surface, which probaly comes from the electron filled dangling bond on (1(-)1(-)1(-))N. Diamond CVD growth showed strong selectivity on the surface crystal index.