Ge Peaking Fin Structure Fabricated by Anisotropic and Low Temperature Neutral Beam Oxidation

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Fri. Mar 17, 2017 9:00 AM - 12:45 PM E206 (E206)

Kuniyuki Kakushima(Titech), Tatsuya Okada(Univ. of the Ryukyus)

9:30 AM - 9:45 AM

〇Shuichi Noda¹, Yao-Jen Lee², Ti-Ji Hong³, Fu-Kuo Hsueh^2,3, Yiming Li³, Seiji Samukawa^1,3 (1.Tohoku Univ., 2.NDL, Taiwan, 3.NCTU, Taiwan)

Keywords:Ge Peaking Fin Structure, Neutral Beam Oxidation, Ge FinFET