4:45 PM - 5:00 PM
[17p-301-11] Duty ratio dependence of charge pumping characteristics in SiC MOSFETs with nitride gate oxides
Keywords:Charge pumping characteristics, SiC MOSFET, Duty ratio
Presentation information
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
[17p-301-1~11] 15.6 Group IV Compound Semiconductors (SiC)
Fri. Mar 17, 2017 1:45 PM - 5:00 PM 301 (301)
Katsuhiro Kutsuki(Toyota)