[17p-302-1~14] 12.4 有機EL・トランジスタ

▲ [17p-302-11] Multi-bit Memory Effect in an Organic Field Effect Transistor using a Charge Storage Polymer

〇(D)Tran Cuong Manh¹、Sakai Heisuke¹、Murakami Tatsuya¹、Murata Hideyuki¹ (1.Japan Adv. Inst. of Sci. and Tech.)

キーワード：Charge trapping memory OFET, multi-bit memory, write-once-read-many memory

Memory effect in an organic field effect transistor (OFET) could be achieved by using a thin film of polymer as charge storage layer. The trapped charges at the trapping layer cause the change in drain current (I_D) or the shift of threshold voltage (V_th) of the OFET, which corresponds to the different states of the memory. An 1-bit devices could be fabricated by using a polymer layer of Cytop, poly methylmethacryrate (PMMA) or poly(α-methylstyrene) (PαMS). However, for a multi-bit application, the OFET must exhibit several distinguished logic states and each state could be easily controlled by a programmed voltage applied to the gate. In this paper, a multi-bit OFET memory using a charge storage polymer of poly(vinyl cinammate) (PVCN) is reported.